Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature

Introduction to (plasma-enhanced) atomic layer deposition

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

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Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Low Temperature Atomic Layer Deposition of Tin Oxide

Atomic layer deposition (ALD) of tin oxide (SnOx) films was achieved using a newly synthesized tin precursor and hydrogen peroxide. We obtained highly pure, conductive SnOx films at temperatures as low as 50 C, which was possible because of high chemical reactivity between the new Sn precursor and hydrogen peroxide. The growth per cycle is around 0.18 nm/cycle in the ALDwindow up to 150 C, and ...

Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

In this study, the influence of direct current (DC) biasing on the growth of titanium dioxide (TiO₂) layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD) using Ti(OiPr)₄ as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO₂ films were d...